CJ2101 Datasheet, PDF (1/5 Pages) ZP Semiconductor – SOT-323 Plastic-Encapsulate MOSFETS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate MOSFETS
CJ2101 P-Channel MOSFET
V_(BR)DSS
-20V
R_DS(on)MAX
100 mΩ@-4.5V
140m Ω @ -2.5V
210 mΩ@-1.8V
FEATURE
z ^{Leading Trench Technology for Low R}DS(on)
Extending Battery Life
MARKING
I_D
-1.4A
SOT-323
3
1. GATE
2. SOURCE
3. DRAIN
1
2
APPLICATION
z High Side Load Switch
z Charging Circuit
z Single Cell Battery Applications such as
Cell Phones, Digital Cameras ,PDAs, etc
Equivalent Circuit
TS1
TS1
TS1= Device code
Solid dot = Green molding compound device,
if none, the normal device
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (t_p=10µs)
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
I_DM
P_D
R_θJA
T_J
T_stg
Value
- 20
±8.0
-1.4
-3.0
0.29
431
150
-50 ~+150
Unit
V
A
W
℃/W
℃
www.cj-elec.com
1
G,Sep,2016