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| CJ1012 Datasheet, PDF (1/5 Pages) ZP Semiconductor – SOT-523 Plastic-Encapsulate MOSFETS | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate MOSFETS
CJ1012 N-Channel Power MOSFET
V(BR)DSS
20 V
RDS(on)MAX
700mΩ@4.5V
850mΩ@2.5V
ID
500mA
SOT-523
3
1. GATE
General Description
2. SOURCE
This Single N-Channel MOSFET has been designed using advanced
3. DRAIN
1
2
Power Trench process to optimize the RDS(ON).
FEATURE
ï¬ High-Side Switching
ï¬ Low On-Resistance
ï¬ Low Threshold
ï¬ Fast Switching Speed
ï¬ ESD protected
MARKING
APPLICATIONS
ï¬ Drivers:Relays, Solenoids, Lamps,
Hammers, Displays, Memories
ï¬ Battery Operated Systems
ï¬ Power Supply Converter Circuits
ï¬ Load/Power Switching Cell Phones, Pagers
Equivalent Circuit
C= Device Code
Solid dot = Green molding compound device,if none,
the normal device.
Maximum ratings (Ta=25â unless otherwise noted)
Parameter
Drain-Source voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current -Pulsed(note1)
Power Dissipation (note 2 , Ta=25â)
Maximum Power Dissipation (note 3 , Tc=25â)
Thermal Resistance from Junction to Ambient
Thermal Resistance from Junction to Case
Storage Temperature
Junction Temperature
Symbol
VDSS
VGS
ID(DC)
IDM(pulse)
PD
RθJA
RθJC
Tj
Tstg
www.cj-elec.com
1
Value
20
±12
500
1000
150
275
833
455
150
-55 ~+150
Unit
V
mA
mW
â/W
â
C,Apr,2016
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