C1815LT1 Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ NPN ）

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
C1815LT1 TRANSISTOR NPN
FEATURES
SOT 23
1. BASE
2. EMITTER
3. COLLECTOR
Power dissipation
P_CM : 0.2
Collector current
W Tamb=25
I_CM: 0.15
A
Collector-base voltage
V_(BR)CBO : 60
V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
ELECTRICAL CHARACTERISTICS Tamb=25
otherwise specified
unless
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V(BR)CBO Ic= 100 A I_E=0
60
V(BR)CEO Ic= 0.1m A IB=0
50
ICBO
VCB=60 V , IE=0
ICEO
VCE=50 V , IB=0
IEBO
VEB= 5V , IC=0
hFE(1)
VCE= 6V, IC= 2m A
130
VCE(sat) IC=100 mA, IB= 10m A
VBE(sat) IC=100 mA, IB= 10m A
VCE=10V, IC= 1mA
fT
80
f=30MHz
CLASSIFICATION OF h_FE(1)
Unit : mm
TYP MAX UNIT
V
V
0.1
A
0.1
A
0.1
A
400
0.25
V
1
V
MHz
DEVICE MARKING : C1815LT1=HF