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| BU406 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(7A,150-200V,60W) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Transistors
BU406 TRANSISTOR (NPN)
FEATURES
ï¬ High Voltage
ï¬ Fast Switching Speed: tf = 750 ns (max)
ï¬ Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A
ï¬ PbâFree Packages are Available*
TO-220-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Value
400
200
6
7
2
62.5
150
-55~+150
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max
Collector-base breakdown voltag
V(BR)CBO IC=100uA, IE=0
400
Collector-emitter breakdown voltage
V(BR)CEO*
IC=100mA,IB=0
200
Emitter-base breakdown voltage
V(BR)EBO
IE=100uA,IC=0
6
Collector cut-off current
ICES
VCB=400V,IE=0
5
Collector cut-off current
ICES
VCB=250V,IE=0
1
Collector cut-off current
ICBO
VCB=300V,IE=0
5
Emitter cut-off current
IEBO
VEB=6V,IC=0
1
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
hFE
VCE(sat)*
VBE(sat)*
Cob
VCE=5V, IC=1A
IC=5A,IB=500mA
IC=5A,IB=500mA
VCB=10V,IE=0, f=1MHz
50
100
1
1.2
80
Transition frequency
fT
*Pulse test: pulse width â¤300μs, duty cycle⤠2.0%.
VCE=5V,IC=0.2A,f=10MHz
10
Unit
V
V
V
mA
mA
μA
mA
V
V
pF
MHz
www.cj-elec.com
1
A-2,Dec,2015
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