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| BT136 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Triacs | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Thyristors
BT136 TRIAC
MAIN FEATURES
Symbol
value
IT(RMS)
VDRM/VRRM
ITSM
6
600
25
unit
A
V
A
TO-220-3L
1. ANODE
2. ANODE
3. GATE
GENERAL DESCRIPTION
. Glass passivated triacs in a plastic envelope ,
intended for use in applications requiring
high bidirectional transient andblocking
voltage capability and high thermal cycling performance.
.Typical applications include motor control,
industrial and domestic lighting , heating and static switching.
ABSOLUTE MAXIMUM RATINGS (Ta=25â unless otherwise noted)
symbol
parameter
IT(RMS) RMS on-state current (full sine wave)
value
unit
D2 PAK/TO-220 TC=107â
6
A
ITSM
Non repetitive surge peak on-state current (full sine wave, Tj =25â)
t=20ms
25
A
t=16.7ms
27
IGM
Peak gate current
2
A
PG(AV)
Tstg
Tj
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Tj=125â
0.5
W
-40 to +150
-40 to +125 â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Rated repetitive peak off-state/reverse voltage
Rated repetitive peak off-state current
On-state voltage
â
â
¡
Gate trigger current
â
¢
â
£
â
â
¡
Gate trigger voltage
â
¢
â
£
Holding current
Symbol
Test conditions
VDRM,VRRM ID=10μA
IDRM, IRRM VD=620V
VTM
IT=5A
T2(+), G(+)
T2(+), G(-) VD=12V
IGT
T2(-), G(-)
RL=100â¦
T2(-), G(+)
T2(+), G(+)
T2(+), G(-) VD=12V
VGT
T2(-), G(-)
RL=100â¦
T2(-), G(+)
IH
IT =100mA IG=20mA
Min Max Unit
600
V
10
μA
1.7
V
10
mA
10
mA
10
mA
-
mA
1.45
V
1.45
V
1.45
V
-
V
20 mA
www.cj-elec.com
1
D,Oct,2014
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