BSS123 Datasheet, PDF (1/5 Pages) NXP Semiconductors – N-channel enhancement mode vertical D-MOS transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
BSS123 N Channel MOSFET
V_(BR)DSS
100 V
R_DS(on)MAX
6Ω@10V
10Ω@4.5V
I_D
0.17A
SOT-23
1. GATE
2. SOURCE
3. DRAIN
FEATURE
 Surface Mount Package
 High Density Cell Design for Extremely Low R_DS(ON)
 Voltage Controlled Small Signal Switch
 Rugged and Reliable
APPLICATION
 Small Servo Motor Controls
 Power MOSFET Gate Drivers
 Switching Application
MARKING
Equivalent Circuit
ABSOLUTE MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Parameter
N-MOSFET
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (note 1)
Pulsed Drain Current (tp=10us)
Continous Source-Drain Diode Current
Power Dissipation
Thermal Resistance from Junction to Ambient (note 1)
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
Symbol
V_DS
V_GS
I_D
I_DM
I_S
P_D
R_θJA
T_J
T_STG
T_L
Value
100
±20
0.17
0.68
0.17
0.35
357
150
-55~+150
260
Unit
V
V
A
A
A
W
℃/W
℃
℃
℃
ZZZFMHOHFFRP
1
A-2,Apr,2015