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| BSR43 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
BSR43 TRANSISTOR (NPN)
FEATURES
z Low Voltage
z High Current
z Complement to BSR33
AAPLICATIONS
z Thick and Thin-Film Circuits
z Telephony and General Industrial Applications
MARKING:AR4
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
90
80
5
1
500
250
150
-55~+150
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Emitter input capacitance
*Pulse test
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)*
hFE(2)*
hFE(3)*
VCE(sat)*
VBE(sat)*
fT
Cob
Cib
Test conditions
IC=100µA,IE=0
IC=1mA,IB=0
IE=100µA,IC=0
VCB=60V,IE=0
VEB=5V,IC=0
VCE=5V, IC=0.1mA
VCE=5V, IC=100mA
VCE=5V, IC=500mA
IC=150mA,IB=15mA
IC=500mA,IB=50mA
IC=150mA,IB=15mA
IC=500mA,IB=50mA
VCE=10V,IC=50mA, f=100MHz
VCB=10V, IE=0, f=1MHz
VBE=0.5V, IC=0, f=1MHz
Min Typ
90
80
5
30
100
50
100
Max
100
100
300
0.25
0.5
1
1.2
12
90
Unit
V
V
V
nA
nA
V
V
V
V
MHz
pF
pF
www.cj-elec.com
1
C,Nov,2015
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