BF821 Datasheet, PDF (1/3 Pages) NXP Semiconductors – PNP high-voltage transistors

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
BF821/BF823 TRANSISTOR (PNP)
SOT-23
FEATURES
z Low current (max.-50 mA)
z High voltage (max.-300V)
z Telephony and professional communication equipment.
1. BASE
2. EMITTER
3. COLLECTOR
MARKING: BF821:1W, BF823: 1Y
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Collector-Base Voltage
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
BF821
BF823
BF821
BF823
Value
-300
-250
-300
-250
-5
-50
0.25
150
-55~150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Unit
V
V
V
mA
W
℃
℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
Test conditions
I_C=-100μA, I_E=0
I_C=-1mA, I_B=0
I_E= -100μA, I_C=0
BF821
BF823
BF821
BF823
Min
-300
-250
-300
-250
-5
I_CBO
V_CB=-200V,I_E=0
I_EBO
V_EB= -5V,I_C=0
h_FE
V_CE= -20V,I_C=-25mA
50
V_CE(sat) I_C=-30mA,I_B= -5mA
f_T
V_CE=-10V, I_C= -10mA,f=100MHz
60
C_ob
V_CB=-30V,I_E=0,f=1MHz
Max
-0.01
-0.05
-0.8
1.6
Unit
V
V
V
μA
μA
V
MHz
pF
www.cj-elec.com
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BA,OJucnt,2014