BF820 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN high-voltage transistors

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
BF820/BF822 TRANSISTOR (NPN)
SOT-23
FEATURES
z Low current (max.50 mA)
z High voltage (max.300V)
z Telephony and professional communication equipment.
1. BASE
2. EMITTER
3. COLLECTOR
MARKING: BF820:1V, BF822: 1X
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Collector-Base Voltage
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
BF820
BF822
BF820
BF822
Value
300
250
300
250
5
50
0.25
150
-55-150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Symbol
V_(BR)CBO
V_(BR)CEO
Test conditions
I_C=100μA, I_E=0
I_C=1mA, I_B=0
V_(BR)EBO I_E= 100μA, I_C=0
I_CBO
V_CB=200V,I_E=0
Min
BF820 300
BF822 250
BF820 300
BF822 250
5
Emitter cut-off current
I_EBO
V_EB= 5V,I_C=0
DC current gain
h_FE
V_CE= 20V,I_C=25mA
50
Collector-emitter saturation voltage
V_CE(sat) I_C=30mA,I_B= 5mA
Transition frequency
Collector output capacitance
f_T
V_CE=10V, I_C= 10mA,f=100MHz
60
C_ob
V_CB=30V,I_E=0,f=1MHz
Unit
V
V
V
mA
W
℃
℃
Max Unit
V
V
V
0.01
μA
0.05
μA
0.6
V
MHz
1.6
pF
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BA,OJucnt,2014