BF622 Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
BF622 TRANSISTOR (NPN)
FEATURES
z Low Current
z High Voltage
AAPLICATIONS
z Video Output Stages
MARKING:DA
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
250
250
5
50
500
250
150
-55~+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Symbol
Test conditions
Min Typ
V_(BR)CBO I_C=100µA,I_E=0
250
V_(BR)CEO I_C=1mA,I_B=0
250
V_(BR)EBO I_E=100µA,I_C=0
5
I_CBO
V_CB=200V,I_E=0
I_EBO
V_EB=5V,I_C=0
h_FE
V_CE=20V, I_C=25mA
50
V_CE(sat) I_C=30mA,I_B=5mA
f_T
VCE=10V,IC=10mA, f=100MHz 60
Max
10
50
0.6
Unit
V
V
V
nA
nA
V
MHz
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1
C,Nov,2015