BF620 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN high-voltage transistors

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
BF620 TRANSISTOR (NPN)
FEATURES
z Low current (max. 50mA)
z High voltage (max. 300V).
z Video output stages.
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
Marking：DC
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
300
300
5
50
500
150
-55~150
Unit
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Symbol
Test conditions
V_(BR)CBO I_C=100μA, I_E=0
V_(BR)CEO I_C=1mA, I_B=0
V_(BR)EBO I_E=100μA, I_C=0
I_CBO
V_CB=200V, I_E=0
I_EBO
V_EB=5V, I_C=0
h_FE
V_CE=20V, I_C=25mA
V_CE(sat) I_C=30mA, I_B=5mA
f_T
V_CE=10V, I_C=10mA, f=100MHz
Min Typ Max Unit
300
V
300
V
5
V
10
nA
50
nA
50
0.6
V
60
MHz
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1
C,Nov,2015