BF483 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN high-voltage transistors

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BF483/BF485/BF487 TRANSISTOR (NPN)
FEATURES
z Low Feedback Capacitance
APPLICATIONS
z Intended for Use in Video Output Stages in
Black-and-white and in Colour Television Receivers.
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
BF483
Collector-Base Voltage
BF485
BF487
BF483
Collector-Emitter Voltage
BF485
BF487
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
300
350
400
250
300
350
5
0.1
830
150
150
-55~+150
TO – 92
1.EMITTER
2.COLLECTOR
3.BASE
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max
BF483 300
Collector-base breakdown voltage
V_(BR)CBO I_C=100µA,I_E=0
BF485 350
BF487 400
BF483 250
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0
BF485 300
BF487 350
Emitter-base breakdown voltage
V_(BR)EBO I_E=100μA,I_C=0
5
Collector cut-off current
I_CBO
V_CB=300V,I_E=0
20
Emitter cut-off current
I_EBO
V_EB=5V,I_C=0
0.1
DC current gain
h_FE(1)
V_CE=20V, I_C=25mA
50
h_FE(2)
V_CE=20V, I_C=40mA
20
Collector-emitter saturation voltage
V_CE(sat) I_C=30mA,I_B=5mA
0.6
Transition frequency
f_T
VCE=10V,IC= 10mA,f=100MHz
70
Collector output capacitance
C_ob
V_CB=30V,I_E=0, f=1MHz
1.4
Unit
V
V
V
nA
μA
V
MHz
pF
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1
C,Dec,2015