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| BF370 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN medium frequency transistor | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BF370 TRANSISTOR (NPN)
FEATURES
z Low Saturation Medium Current Application
z High Transition Frequency
TO â 92
1.COLLECTOR
2. BASE
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
40
15
4.5
0.1
500
250
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC= 0.1mA,IE=0
40
V
V(BR)CEO IC=1mA,IB=0
15
V
V(BR)EBO IE=100μA,IC=0
4.5
V
ICBO
VCB=20V,IE=0
0.4
μA
IEBO
VEB=2V,IC=0
0.1
μA
hFE
VCE=1V, IC=10mA
40
200
VCE(sat)
IC=15mA,IB=1.5mA
0.2
V
VBE(sat)
IC=15mA,IB=1.5mA
1.2
V
fT
VCE=10V,IC= 10mA,f=100 MHz 500
MHz
www.cj-elec.com
1
C,Dec,2015
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