BD434 Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – PNP SILICON EPIBASE TRANSISTORS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
BD434 / BD436 / BD438 TRANSISTOR (PNP)
FEATURES
z Amplifier and Switching Applications
z Complement To BD433, BD435 And BD437
0$5.,1*
TO – 126
1. EMITTER
2. COLLECTOR
3. BASE
Equivalent Circuit
BD434
z _XXX
BD436
z_XXX
BD438
z_XXX
BD434,BD436,BD438 'HYLFH FoGH
Solid dot = Green molding compound
device, if none, the normal device
;;; &ode
ORDERING INFORMATION
Part Number
BD434
BD436
BD438
BD434-TU
BD436-TU
BD438-TU
Package
TO-126
TO-126
TO-126
TO-126
TO-126
TO-126
Packing Method
Bulk
Bulk
Bulk
Tube
Tube
Tube
Pack Quantity
200pcs/Bag
200pcs/Bag
200pcs/Bag
60pcs/Tube
60pcs/Tube
60pcs/Tube
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
Collector-Base Voltage
BD434
-22
V_CBO
BD436
-32
V
BD438
-45
Collector-Emitter Voltage BD434
-22
V_CEO
BD436
-32
V
BD438
-45
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current –Continuous
-4
A
P_C
Collector Power Dissipation
1.25
W
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
-55-150
℃
www.cj-elec.com
1
C,Aug,2017