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BD034 Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (PNP)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
BD034 TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM:
1.25 W (Tamb=25℃)
Collector current
ICM:
-2.5 A
Collector-base voltage
V(BR)CBO:
-110 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
TO-126
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
Test conditions
Ic=-100µA, IE=0
Ic=-10mA, IB=0
IE=-100µA, IC=0
VCB=-100V, IE=0
VEB=-5V, IC=0
VCE=-2V, IC=-100mA
VCE=-2V, IC=-1.5A
IC=-2A, IB=-200mA
VCE=-5V, IC=-500mA
VCE=-1V, IC=-250mA, f=1MHz
MIN TYP MAX UNIT
-110
V
-80
V
-7
V
-1 µA
-1 µA
100
560
40
-0.5 V
-1
V
3
MHz
CLASSIFICATION OF hFE(1)
Rank
R
Range
100-200
S
140-280
T
200-400
U
280-560