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| BCX70J Datasheet, PDF (1/3 Pages) Samsung semiconductor – NPN EPITAXIAL SILICON TRANSISTOR | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-23 Plastic-Encap sulate Transistors
BCX70J,BCX70K TRANSISTOR (NPN)
SOT-23
FEATURES
z Low current
z Low voltage
MARKING : BCX70Jï¼AJ, BCX70K:AK
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
45
45
5
200
250
150
-55-150
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
BCX70J
DC current gain
BCX70K
Collector-emitter saturation voltage
Base -emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Noise Figure
Gain-Bandwidth Product
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICES
hFE1
hFE2
hFE3
hFE1
hFE2
hFE3
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
VBE
Cob
NF
fT
Test conditions
IC=10μA,IE=0
IC=2mA,IB=0
IE=1μA,IC=0
VCE=45V,VBE=0
VCE=5V,IC=10μA
VCE=5V,IC=2mA
VCE=1V,IC=50mA
VCE=5V,IC=10μA
VCE=5V,IC=2mA
VCE=1V,IC=50mA
IC= 10mA IB= 0.25 mA
IC= 50mA IB=1.25 mA
IC= 10mA IB=-0.25 mA
IC= 50mA IB= 1.25 mA
VCE=5V,IC=2mA
VCB=10V,IE=0,f=1MHz
VCE=5V,IC=200μA,
f=1kHz,BW=200Hz,RS=2kâ¦
VCE= 5 V, IC=10mA,f =100 MHz
Min Typ
45
45
5
30
250
90
100
380
100
0.05
0.1
0.6
0.7
0.55
1.7
100 250
Unit
V
V
V
mA
mW
â
â
Max Unit
V
V
V
20
nA
460
630
0.35
V
0.55
V
0.85
V
1.05
V
0.75
V
pF
6
dB
MHz
www.cj-elec.com
1
CA,JOucnt,2014
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