BCX69 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
BCX69 TRANSISTOR (PNP)
FEATURES
z For general AF applications
z High collector current
z High current gain
z Low collector-emitter saturation voltage
z Complementary type: BCX68 (NPN)
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Value
Unit
-25
V
-20
V
-5
V
-1
A
0.8
W
150
℃
-65~150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
MIN
Collector-base breakdown voltage
V_(BR)CBO I_C=-10μA , I_E=0
-25
Collector-emitter breakdown voltage
V_(BR)CEO I_C=-30mA , I_B=0
-20
Emitter-base breakdown voltage
V_(BR)EBO I_E=-1μA, I_C=0
-5
Collector cut-off current
I_CBO
V_CB=-25V, I_E=0
Emitter cut-off current
DC current gain
I_EBO
V_EB=-5V, I_C=0
BCX69
85
BCX69-10
BCX69-16
h_{FE (1)} ¹⁾ V_CE=-1V, I_C=-500mA
85
100
BCX69-25
160
h_FE(2) ¹⁾ V_CE=-10V, I_C=-5mA
50
h_FE(3) ¹⁾ V_CE=-1V, I_C=-1A
60
Collector-emitter saturation voltage
V_CE(sat) I_C=-1A, I_B=-100mA
Base-emitter voltage
Transition frequency
1) _{Pulse test: t ≤=300µs, D = 2%}
MARKING: BCX69=CE1 BCX69-10=CF1
V_BE(ON) ¹⁾
f_T
I_C=-5mA, V_CE=-10V
I_C=-1A, V_CE=-1V
V_CE=-5V, I_C=-100mA
f=20MHz
BCX69-16=CG1 BCX69-25=CH1
TYP
-0.6
100
MAX UNIT
V
V
V
-0.1 μA
-0.1
μA
375
160
250
375
-0.5
V
V
-1
MHz
www.cj-elec.com
1
C,Nov,2015