BCX38 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – Plastic-Encapsulate Transistors

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BCX38 TRANSISTOR (NPN)
FEATURES
z High DC Current Gain
TO – 92
1.EMITTER
2.BASE
3.COLLECTOR
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
80
60
10
0.8
625
200
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
*Pulse test
Symbol
Test conditions
Min
Typ Max Unit
V_(BR)CBO I_C= 0.01mA,I_E=0
80
V
V_(BR)CEO* I_C=10mA,I_B=0
60
V
V_(BR)EBO I_E=0.01mA,I_C=0
10
V
I_CBO
V_CB=60V,I_E=0
0.1
μA
I_EBO
V_EB=8V,I_C=0
V_CE=5V, I_C=100mA
0.1
μA
h_FE(1)*
BCX38A
BCX38B
500
2000
BCX38C 5000
V_CE=5V, I_C=500mA
h_FE(2) ^*
BCX38A
BCX38B
1000
4000
V_CE(sat) ^*
V_BE*
BCX38C
I_C=800mA,I_B=8mA
I_C=800mA, V_CE=5V
10000
1.25
V
1.8
V
www.cj-elec.com
1
C,Aug,2016