BCX19 Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN general purpose transistor

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
BCX19 TRANSISTOR (NPN)
SOT-23
FEATURES
z Low voltage
MARKING : U1
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
50
VCEO Collector-Emitter Voltage
45
VEBO Emitter-Base Voltage
5
IC
Collector Current
500
PC
Collector Power Dissipation
225
RΘJA Thermal Resistance From Junction To Ambient
556
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Symbol
Test conditions
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE1
h_FE2
h_FE3
V_CE(sat)
V_BE(on)
I_C=100μA, I_E=0
= I_C=10mA, I_B 0
I_E=100μA, I_C=0
= V_CB=20V , I_E 0
= V_EB=5V , I_C 0
V_CE= 1V,=IC 100mA
V_CE= = 1V, IC 300mA
V_CE= = 1V, IC 500mA
Ic=500mA, I_B= 50mA
Ic=500mA, V_CE= 1V
Min
Typ
50
45
5
100
70
40
Max
0.1
10
600
Unit
V
V
V
μA
μA
0.62 V
1.2
V
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1
BA,OJucnt,2014