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| BCW68 Datasheet, PDF (1/4 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-23 Plastic-Encapsulate Transistors
BCW68 TRANSISTOR (PNP)
SOT-23
FEATURES
Complementary to BCW66, BCW68 is subdivided into
three groups F, G and H according to its DC current gain.
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-60
VCEO Collector-Emitter Voltage
-45
VEBO Emitter-Base Voltage
-5
IC
Collector Current
-800
PC
Collector Power Dissipation
330
RÎJA Thermal Resistance From Junction To Ambient
379
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55ï½+150
Unit
V
V
V
mA
mW
â/W
â
â
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Symbol Test conditions
V(BR)CBO IC=- 10μA, IE=0
Min
-60
Collector-emitter breakdown voltage V(BR)CEO IC= -10mA, IB=0
-45
Emitter-base breakdown voltage
V(BR)EBO IE=-10μA, IC=0
-5
Collector cut-off current
ICBO
VCB=-45 V, IE=0
Collector cut-off current
IEBO
VEB=-4 V, IC=0
VCE=-10V, IC=-0. 1mA
hFE1
F 35
G 50
H 80
hFE2
DC current gain
hFE3
hFE4
Collector-emitter saturation voltage VCE(sat)
VCE=-1V, IC=- 10mA
VCE=-1V, IC=- 100mA
VCE=-2V, IC=- 500mA
IC=-100mA, IB=-10mA
IC=-500mA, IB=-50mA
F 75
G 120
H 180
F 100
G 160
H 250
F 35
G
60
H 100
Base-emitter saturation voltage
VBE(sat)
IC=-100mA, IB=-10mA
IC=-500mA, IB=-50mA
Transition frequency
Output capacitance
Input capacitance
fT
VCE= -5V,IC=-50mA,f=20MHz
Cob
VCB= -10V,IE=0,f=1MHz
Cib
VEB= -0.5V,IE=0,f=1MHz
MARKING
Rank
Range
Marking
F
100-250
DF
G
160-400
DG
H
250-630
DH
Typ
200
6
60
www.cj-elec.com
1
Max
-0.02
-0.02
Unit
V
V
V
μA
μA
250
400
630
-0.3
-0.7
-1.25
-2
V
V
V
V
MHz
pF
pF
DA,JOucnt,2014
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