BCW66 Datasheet, PDF (1/4 Pages) STMicroelectronics – SMALL SIGNAL NPN TRANSISTORS

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
BCW66 TRANSISTOR (NPN)
SOT-23
FEATURES
Complementary to BCW68
BCW66 is subdivided into three groups F,G and H according to DC current gain
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
75
VCEO Collector-Emitter Voltage
45
VEBO Emitter-Base Voltage
5
IC
Collector Current
800
PC
Collector Power Dissipation
200
RΘJA Thermal Resistance From Junction To Ambient
625
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output capacitance
Input capacitance
Noise figure
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE1
h_FE2
h_FE3
h_FE4
V_CE(sat)
V_BE(sat)
f_T
C_ob
C_ib
NF
Test conditions
I_C= 10μA, I_E=0
I_C= 10mA, I_B=0
I_E=10μA, I_C=0
V_CB=45 V, I_E=0
V_EB=4 V, I_C=0
V_CE=10V, I_C=0. 1mA
BCW66F
BCW66G
BCW66H
V_CE=1V, I_C= 10mA
V_CE=1V, I_C=100mA
V_CE=2V, I_C=500mA
BCW66F
BCW66G
BCW66H
BCW66F
BCW66G
BCW66H
BCW66F
BCW66G
BCW66H
I_C=100mA, I_B=10mA
I_C=500mA, I_B=50mA
I_C=500mA, I_B=50mA
V_CE=10V,I_C=20mA,f=100MHz
V_CB=10V,I_E=0,f=1MHz
V_EB=0.5V,I_E=0,f=1MHz
V_CE=5V,I_C=0.2mA,f=1KHz,
Rs=1KΩ,BW=200Hz
Min
75
45
5
35
50
80
75
110
180
100
160
250
35
60
100
100
MARKING
Rank
Range
Marking
F
100-250
EF
G
160-400
EG
H
250-630
EH
www.cj-elec.com
1
Typ
Max Unit
V
V
V
0.02
μA
0.02
μA
250
400
630
0.3
V
0.7
V
2
V
MHz
12
pF
80
pF
10
dB
DA,JOucnt,2014