BCV47 Datasheet, PDF (1/4 Pages) Central Semiconductor Corp – NPN SILICON DARLINGTON TRANSISTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
BCV47 TRANSISTOR (NPN)
SOT–23
FEATURES
 High Collector Current
 High Current Gain
MARKING:FG
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
80
VCEO Collector-Emitter Voltage
60
VEBO Emitter-Base Voltage
10
IC
Collector Current
500
PC
Collector Power Dissipation
300
RΘJA Thermal Resistance From Junction To Ambient
416
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Collector-base breakdown voltage
V(BR)CBO IC=100µA, IE=0
80
Collector-emitter breakdown voltage
V(BR)CEO IC=10mA, IB=0
60
Emitter-base breakdown voltage
V(BR)EBO IE=10µA, IC=0
10
Collector cut-off current
ICBO
VCB=60V, IE=0
Emitter cut-off current
IEBO
VEB=4V, IC=0
hFE(1)
VCE=1V, IC=100µA
2000
DC current gain
hFE(2)
hFE(3)
VCE=5V, IC=10mA
VCE=5V, IC=100mA
4000
10000
hFE(4)
VCE=5V, IC=0.5A
2000
Collector-emitter saturation voltage
VCE(sat) IC=100mA, IB=0.1mA
Base-emitter saturation voltage
VBE(sat) IC=100mA, IB=0.1mA
Transition frequency
fT
VCE=5V,IC=50mA, f=100MHz
170
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
3.5
Max
0.1
0.1
1
1.5
Unit
V
V
V
µA
µA
V
V
MHz
pF
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1
B,Sep,2014