BCP69 Datasheet, PDF (1/3 Pages) NXP Semiconductors – PNP medium power transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223 Plastic-Encapsulate Transistors
BCP69 TRANSISTOR (PNP)
FEATURES
 High Current and Low Voltage
 NPN Complement:BCP68
APPLICATIONS
 General Purpose Switching and Amplification
 Power Applications Such as Audio Output Stages
SOT-223
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-32
-20
-5
-1
1
125
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO IC=-0.1mA,IE=0
-32
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0
-20
Emitter-base breakdown voltage
V(BR)EBO IE=-0.1mA,IC=0
-5
Collector cut-off current
ICBO
VCB=-25V,IE=0
Emitter cut-off current
IEBO
VEB=-5V,IC=0
hFE(1) VCE=-1V, IC=-0.5A
85
DC current gain
hFE(2) VCE=-1V, IC=-1A
60
hFE(3) VCE=-10V, IC=-5mA
50
hFE(4) VCE=-1.8V, IC=-10mA
140
Collector-emitter saturation voltage
VCE(sat) IC=-1A,IB=-100mA
Base-emitter voltage
VBE(1)
VBE(2)
VCE=-10V, IC=-5mA
VCE=-1V, IC=-1A
Transition frequency
fT
VCE=-5V,IC=-10mA, f=100MHz 40
Collector output capacitance
Cob
VCB=-5V, IE=0, f=1MHz
Typ Max Unit
V
V
V
-100 nA
-100 nA
375
230
-0.5
V
-0.68 V
-1
V
MHz
48
pF
CLASSIFICATION OF hFE(1)
RANK
RANGE
BCP69-16
100–250
BCP69-25
160–375
www.cj-elec.com
1
D,Jan,2017