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| BCP68 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN medium power transistor | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223 Plastic-Encapsulate Transistors
BCP68 TRANSISTOR (NPN)
SOT-223
FEATURES
z For general AF applications
z High collector current
z High current gain
z Low collector-emitter saturation voltage
z Complementary type: BCP69 (PNP)
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Storage Temperature Range
Value
32
20
5
1
1
94
-65~+150
Unit
V
V
V
A
W
â /W
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=100μA,IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=1mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=100μA ,IC=0
Collector cut-off current
ICBO
VCB=25V,IE=0
Emitter cut-off current
IEBO
VEB=5V,IC=0
hFE(1) VCE=1V,IC=500mA
DC current gain
hFE(2) VCE=1V,IC=1A
hFE(3) VCE=10V,IC=5mA
Collector-emitter saturation voltage
VCE(sat) IC=1A,IB=100mA
Base-emitter voltage
VBE1
VBE2
VCE=10V,IC=5mA
VCE=1V,IC=1A
Transition frequency
fT
VCE=5V,IC=10mA,f=100MHz
Collector output capacitance
CLASSIFICATION OF hFE(1)
Rank
Cob
BCP68-10
VCB=5V,IE=0,f=1MHz
BCP68-16
Range
85-160
100-250
Min Typ
32
20
5
85
60
50
40
38
Max Unit
V
V
V
0.1
μA
0.1
μA
375
0.5
V
0.68
V
1
V
MHz
pF
BCP68-25
160-375
www.cj-elec.com
1
C,Jan,2017
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