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| BCP55 Datasheet, PDF (1/4 Pages) STMicroelectronics – MEDIUM POWER AMPLIFIER | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223 Plastic-Encapsulate Transistors
BCP54,55,56 TRANSISTOR (NPN)
SOT-223
FEATURES
z For AF driver and output stages
z High collector current
z Low collector-emitter saturation voltage
z Complementary types: BCP51 ... BCP53 (PNP)
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
1. BASE
2. COLLECTOR
3. EMITTER
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Storage Temperature Range
BCP54
45
45
BCP55
60
60
5
1
1.5
83.3
-65~+150
BCP56
100
80
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Unit
V
V
V
A
W
â/W
â
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Base-emitter breakdown voltage
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
BCP54
BCP55
BCP56
BCP54
BCP55
BCP56
Symbol Test conditions
V(BR)CBO IC= 0.1mA,IE=0
V(BR)CEO IC= 10mA,IB=0
V(BR)EBO
ICBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE
fT
IE= 10μA,IC=0
VCB= 30 V, IE=0
VCE= 2V, IC=5mA
VCE= 2V, IC=150m A
VCE= 2V, IC=500m A
IC=500mA,IB=50mA
VCE=2V, IC=500m A
VCE=10V,IC=50mA,f=100MHz
Min
45
60
100
45
60
80
5
25
63
25
100
Max Unit
V
V
V
100
nA
250
0.5
V
1
V
MHz
CLASSIFICATION OF hFE(2)
Rank
BCP54-10, BCP55-10, BCP56-10
Range
63-160
Marking
BCP54-10, BCP55-10, BCP56-10
BCP54-16, BCP55-16, BCP56-16
100-250
BCP54-16, BCP55-16, BCP56-16
www.cj-elec.com
1
G,Jan,2017
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