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| BCP53 Datasheet, PDF (1/4 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223 Plastic-Encapsulate Transistors
BCP51,52,53 TRANSISTOR (PNP)
FEATURES
z For AF driver and output stages
z High collector current
z Low collector-emitter saturation voltage
z Complementary types: BCP54...BCP56 (NPN)
SOT-223
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Storage Temperature Range
BCP51
-45
-45
BCP52
-60
-60
-5
-1
1.5
94
-65~+150
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
BCP53
-100
-80
Unit
V
V
V
A
W
â/W
â
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Base-emitter breakdown voltage
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
BCP51
BCP52
BCP53
BCP51
BCP52
BCP53
Symbol Test conditions
V(BR)CBO IC=- 0.1mA,IE=0
V(BR)CEO IC= -10mA,IB=0
V(BR)EBO
ICBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE
fT
IE= -10μA,IC=0
VCB= -30 V, IE=0
VCE=-2V, IC=-5mA
VCE= -2V, IC=-150m A
VCE= -2V, IC=-500m A
IC=-500mA,IB=-50mA
VCE=-2V, IC=-500m A
VCE=-10V,IC=-50mA,f=100MHz
Min
-45
-60
-100
-45
-60
-80
-5
25
63
25
100
Max
-100
250
-0.5
-1
Unit
V
V
V
nA
V
V
MHz
CLASSIFICATION OF hFE(2)
Rank
BCP51-10, BCP52-10, BCP53-10
Range
63-160
BCP51-16, BCP52-16, BCP53-16
100-250
www.cj-elec.com
14
E,Jan,2017
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