 English |
|
|
|
|
|
|
|
| BC857T Datasheet, PDF (1/4 Pages) Infineon Technologies AG – PNP Silicon AF Transistor | |||
| |||
|
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-523 Plastic-Encapsulate Transistors
BC857T TRANSISTOR (PNP)
FEATURES
z Ideally suited for automatic insertion
z For Switching and AF Amplifier Applications
SOT-523
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current âContinuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-50
-45
-6
-0.1
150
150
-55-150
Unit
V
V
V
A
mW
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector Cutoff Current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Cob
NF
Test conditions
IC= -10µA, IE=0
IC= -10mA, IB=0
IE= -1µA, IC=0
VCB=-30V
VCE=-5V, IC=-2mA
IC=-10mA, IB=-0.5 mA
IC=-100mA, IB=-5 mA
IC=-10mA, IB=-0.5 mA
IC=-100mA, IB= -5 mA
VCE= -5V, IC= -2mA
VCE= -5V, IC= -10mA
VCE= -5 V, IC= -10mA
f=100MHz
VCB=-10V,f=1MHz
VCE=-5V,IC=-0.2mA,
f=1kHz,
RS=2kâ¦,BW=200Hz
Min
-50
-45
-6
125
-600
100
Typ Max Unit
V
V
V
-15 nA
800
-0.3
V
-0.65
-0.7
V
-0.9
-750
mV
-820
MHz
4.5 pF
10 dB
CLASSIFICATION OF hFE
Rank $
BC
Range
1-250 -4
Marking E F G
www.cj-elec.com
1
D,Jul,2015
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese