BC857S Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T ^{SOT-363 Plastic-Encapsulate Transistors}
BC857S ^{DUAL TRANSISTOR (PNP+PNP)}
FEATURES
z Two transistors in one package
z Reduces number of components and board space
z No mutual interference between the transistors
MARKING: 3C
MAXIMUM RATINGS(T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
V_CBO
Collector- Base Voltage
-50
V_CEO
Collector-Emitter Voltage
-45
V_EBO
Emitter-Base Voltage
-5
I_C
Collector Current -Continuous
-0.2
P_C
Rθ_JA
Collector Power Dissipation
0.3
Thermal Resistance from Junction to Ambient 417
T_J
Junction Temperature
150
T_ssttgg
Storage Temperature
-55-150
Units
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS(Ta= 25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol Test conditions
V_(BR)CBO Ic=-10µA,I_E=0
V_(BR)CEO Ic=-10mA,I_B=0
V_(BR)EBO I_E=-10µA,I_C=0
I_CBO
V_CB=-30V,I_E=0
h_FE
V_CE=-5V,I_C=-2mA
V_CE(sat)(1) I_C=-10mA,I_B=-0.5mA
V_CE(sat)(2) I_C=-100mA,I_B=-5mA
V_BE(1) V_CE=-5V,I_C=-2mA
V_BE(2) V_CE=-5V,I_C=-10mA
f_T
V_CE=-5V,I_C=-10mA,f=100MHz
C_ob
V_CB=-10V,I_E=0,f=1MHz
V_CE=-5V,I_c=-0.2mA,
NF
f=1kHZ,Rs=2KΩ,BW=200Hz
SOT-363
Min Typ Max Unit
-50
V
-45
V
-5
V
-15
nA
125
630
-0.3
V
-0.65 V
-0.6
-0.75 V
-0.82 V
200
MHz
3.5
pF
2.5
dB
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1
E,Mar,2016