BC848S Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – DUAL TRANSISTOR (NPN+NPN)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
BC848S DUAL TRANSISTOR (NPN+NPN)
APPLICATION
 This device is designed for general purpose amplifier applications
SOT-363
Marking : 2C
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
30
VCEO
Collector-Emitter Voltage
30
VEBO
Emitter-Base Voltage
6
IC
Collector Current-Continuous
100
PD
Power Dissipation
200
RθJA
Thermal Resistance from Junction to Ambient
625
Tj
Junction Temperature
150
Tstg
Storage Temperature Range
-55~+150
Units
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V(BR)CBO I_C=10µA,I_E=0
Collector-emitter breakdown voltage
V(BR)CEO I_C=1mA,I_B=0
Emitter-base breakdown voltage
V(BR)EBO I_E=10µA,I_C=0
Collector cut-off current
ICBO
V_CB=30V,I_E=0
Collector cut-off current
ICEO
V_CE=30V,I_E=0
Emitter cut-off current
I_EBO
VEB =5V,IC=0
DC current gain*
h_FE*
V_CE=5V,I_C=2mA
Collector-emitter saturation voltage
VCE(sat)(1)*
VCE(sat)(2)*
I_C=10mA,I_B=0.5mA
I_C=100mA,I_B=5mA
Base-emitter voltage
V_BE(sat)*
I_C=10mA,I_B=0.5mA
I_C=100mA,I_B=5mA
Base-emitter voltage
VBE(on) *
V_CE=5V,I_C=2mA
V_CE=5V,I_C=10mA
Transition frequency
f_T
V_CE=5V,I_C=10mA ,f=100MHz
Collector output capacitance
Cob
*pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%.
V_CB=10V,I_E=0,f=1MHz
Min Typ Max Unit
30
V
30
V
6
V
100
nA
100
nA
100
nA
420
800
0.25
V
0.6
V
0.7
V
0.9
V
0.58
0.7
V
0.77
V
100
MHz
4.5
pF
www.cj-elec.com
1
B,Mar,2016