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| BC847T Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic Encapsulate Transistor | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-523 Plastic-Encapsulate Transistors
BC847T TRANSISTOR (NPN)
FEATURES
y Ideally suited for automatic insertion
y For Switching and AF Amplifier Applications
MARKING: BC847AT=1E; BC847BT=1F; BC847CT=1G
SOT-523
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC*
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current âContinuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
50
45
6
0.1
150
150
-55-150
Unit
V
V
V
A
mW
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector Cutoff Current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Noise figure
BC847AT
BC847BT
BC847CT
BC847BT
BC847CT
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
IC= 10µA, IE=0
IC= 10mA, IB=0
IE= 1 µA, IC=0
VCB=30V
hFE
VCE= 5V, IC= 2mA
VCE(sat)
VBE(sat)
VBE(on)
fT
Cob
NF
IC=10mA, IB=0. 5mA
IC=100mA, IB= 5mA
IC=10mA, IB=0. 5mA
IC=100mA, IB= 5mA
VCE= 5V, IC= 2mA
VCE= 5V, IC= 10mA
VCE= 5 V, IC= 10mA
f=100MHz
VCB=10V,f=1MHz
VCE=5V,f=1kHz,
RS=2kâ¦,BW=200Hz
Min Typ Max Unit
50
V
45
V
6
V
15 nA
110
220
200
450
420
800
0.25
V
0.6
0.7
V
0.9
580 660 700
V
770
100
MHz
4.5 pF
10
dB
4
www.cj-elec.com
1
EA,MJuanr,,22001146
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