BC846S Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN general purpose double transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T ^{SOT-363 Plastic-Encapsulate Transistors}
BC846S DUAL TRANSISTOR (NPN+NPN)
FEATURES
z Two transistors in one package
z Reduces number of components and board space
z No mutual interference between the transistors
SOT-363
MARKING: 4Ft
MAXIMUM RATINGS(T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
V_CBO
Collector-Base Voltage
80
V
V_CEO
Collector-Emitter Voltage
65
V
V_EBO
Emitter-Base Voltage
6
V
I_C
Collector Current –Continuous
0.1
A
P_C
Collector Dissipation
200
mW
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS ( Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V_(BR)CBO I_C=10µA,I_E=0
Collector-emitter breakdown voltage
V_(BR)CEO I_C=10mA,I_B=0
Emitter-base breakdown voltage
V_(BR)EBO I_E=10µA,I_C=0
Collector cut-off current
I_CBO
V_CB=30V,I_E=0
Emitter cut-off current
= I _EBO I_C=0, V_EB 5V
DC current gain
h_FE
V_CE=5V,I_C=2mA
Collector-emitter saturation voltage
V_CE(sat)(1) I_C=10mA,I_B=0.5mA
V_CE(sat)(2) I_C=100mA,I_B=5mA
Base-emitter saturation voltage
V_BE(sat) I_C=10mA,I_B=0.5mA
Transition frequency
f_T
V_CB=5V,I_E=10mA,f=100MHz
Collector output capacitance
C_ob
V_CB=10V,I_E=0,f=1MHz
Min
Typ Max Unit
80
V
65
V
6
V
15
nA
5
µA
110
0.1
V
0.3
V
0.77
V
100
MHz
1.5
pF
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AD,,JMuna,r2,2001146