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| BC818 Datasheet, PDF (1/4 Pages) AUK corp – NPN Silicon Transistor (High current application Switching application) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-23 Plastic-Encapsulate Transistors
BC818 TRANSISTOR (NPN)
SOT-23
FEATURES
z For general AF applications
z High collector current
z High current gain
z Low collector-emitter saturation voltage
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
0.5
A
PC
Collector Power Dissipation
0.3
W
Tj
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Collecter capactiance
Transition frequency
Symbol
VCBO
VCEO
VEBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VBE
Cob
fT
Test conditions
IC= 10μA, IE=0
IC= 10mA, IB=0
IE= 10μA, IC=0
VCB= 25 V , IE=0
VEB= 4V, IC=0
VCE= 1V, IC= 100mA
VCE= 1V, IC= 300mA
IC= 500mA, IB= 50mA
IC= 500mA, IB= 50mA
VCE=1V, IC= 500mA
VCB=10V ,f=1MHz
VCE= 5 V, IC= 50mA
f=100MHz
Min
Typ
30
25
5
100
60
6
170
Max Unit
V
V
V
0.1
μA
0.1
μA
630
0.7
V
1.2
V
1.2
V
pF
MHz
CLASSIFICATION OF hFE (1)
Rank
Range
Marking
BC818-16
100-250
6E
BC818-25
160-400
6F
BC818-40
250-630
6G
www.cj-elec.com
1
DA,JNuonv,,22001145
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