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| BC817W Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN general purpose transistor | |||
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JIANGSUCHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-323 Plastic-Encapsulate Transistors
BC817W TRANSISTOR (NPN)
FEATURES
ï¬ For General AF Applications
ï¬ High Collector Current
ï¬ High Current Gain
ï¬ Low Collector-Emitter Saturation Voltage
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
MAXMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current -Continuous
PC
Collector Dissipation
RθJA
Thermal Resistance from Junction to Ambient
Tj
Junction Temperature
Tstg
Storage Temperature
Value
50
45
5
0.5
0.2
625
150
-55~+150
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS(Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ
Collector-base breakdown voltage
V(BR)CBO IC=10μA,IE=0
50
Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0
45
Emitter-base breakdown voltage
V(BR)EBO IE=1μA,IC=0
5
Collector cut-off current
ICBO
VCB=20V,IE=0
Emitter cut-off current
IEBO
VEB=5V,IC=0
DC current gain
hFE(1) VCE=1V,IC=100mA
100
hFE(2) VCE=1V,IC=500mA
40
Collector-emitter saturation voltage
VCE(sat) IC=500mA,IB=50mA
Base-emitter saturation voltage
VBE(sat) IC=500mA,IB=50mA
Base-emitter voltage
VBE(ON) VCE=1V,IC= 500mA
Transition frequency
fT
VCE=5V,IC=10mA,f=100MHz
100
Collector output capacitance
Cob
VCB=10V,f=1MHz
Max
0.1
0.1
600
0.7
1.2
1.2
5
Unit
V
V
V
μA
μA
V
V
V
MHz
pF
CLASSIFICATION of hFE (1)
Rank
Range
Marking
BC817-16W
100-250
6A
BC817-25W
160-400
6B
BC817-40W
250-600
6C
www.cj-elec.com
1
DA,JSuenp,,22001144
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