BC817 Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN general purpose transistor

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z For general AF applications
z High collector current
z High current gain
z Low collector-emitter saturation voltage
z Complementary types: BC807 (PNP)
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1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
50
VCEO Collector-Emitter Voltage
45
VEBO Emitter-Base Voltage
5
IC
Collector Current
500
PC
Collector Power Dissipation
300
RΘJA Thermal Resistance From Junction To Ambient
417
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
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I_C= 10μA, I_E=0
I_C= 10mA, I_B=0
I_E= 1μA, I_C=0
V_CB= 45 V , I_E=0
V_EB= 4V, I_C=0
V_CE= 1V, I_C= 100mA
V_CE= 1V, I_C= 500mA
I_C= 500mA, I_B= 50mA
I_C= 500mA, I_B= 50mA
V_CE= 1 V, I_C= 500mA
V_CB=10V ,f=1MHz
V_CE= 5 V, I_C= 10mA
f=100MHz
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%
 0in
50
45
5
100
40
100
Typ^  0ax
0.1
0.1
600
0.7
1.2
1.2
10
%&

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Unit
V
V
V
μA
μA
V
V
V
pF
MHz
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1
DA,JOucnt,2014