BC807 Datasheet, PDF (1/4 Pages) NXP Semiconductors – PNP general purpose transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-23 Plastic-Encapsulate Transistors
BC807 TRANSISTOR (PNP)
FEATURE
Ldeally suited for automatic insertion
Epitaxial planar die construction
Complementary NPN type available(BC817)
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-50
VCEO Collector-Emitter Voltage
-45
VEBO Emitter-Base Voltage
-5
IC
Collector Current
-500
PC
Collector Power Dissipation
300
RΘJA Thermal Resistance From Junction To Ambient
417
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol T est conditions
Collector-base breakdown voltage
V_CBO I_C= -10μA, I_E=0
Min Max Unit
-50
V
Collector-emitter breakdown voltage
V_CEO I_C== -10mA, I_B 0
-45
V
Emitter-base breakdown voltage
V_EBO I_E= -1μA, I_C=0
-5
V
Collector cut-off current
I_CBO
V= _CB= -45V, I_E 0
-0.1 μA
Emitter cut-off current
I_EBO
V= _EB= -4 V, I_C 0
-0.1 μA
DC current gain
hFE(1)
hFE(2)
V_CE= -1V, I_C= -100mA
V_CE= -1V, I_C= -500mA
100
600
40
Collector-emitter saturation voltage
Base-emitter saturation voltage
V_CE(sat)
V_BE(sat)
I_C=-500mA, I_B= -50mA
I_C= -500mA, I_B= -50mA
-0.7
V
-1.2
V
Transition frequency
f_T
V_CE= -5V, I_C= -10mA
f=100MHz
100
MHz
CLASSIFICATION OF hFE ₍₁₎
Rank
Range
Marking
BC807-16
100-250
5A
BC807-25
160-400
5B
BC807-40
250-600
5C
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1
F,Jun,2016