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| BC369 Datasheet, PDF (1/3 Pages) NXP Semiconductors – PNP medium power transistor | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BC369 TRANSISTOR (PNP)
FEATURES
z High Current
z Low Voltage
TO â 92
1.EMITTER
2.COLLECTOR
3.BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction temperature
storage temperature
Value
-25
-20
-5
-1
0.625
200
150
-55~+150
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC= -0.1mA,IE=0
-25
V
V(BR)CEO IC=-10mA,IB=0
-20
V
V(BR)EBO IE=-0.01mA,IC=0
-5
V
ICBO
VCB=-25V,IE=0
-10
μA
IEBO
VEB=-5V,IC=0
-10
μA
hFE(1)
VCE=-1V, IC=-0.5A
85
375
hFE(2)
VCE=-10V, IC=-5mA
50
hFE(3)
VCE=-1V, IC=-1A
60
VCE(sat)
IC=-1A,IB=-0.1A
-0.5
V
VBE
IC=-1A, VCE=-1V
-1
V
fT
VCE=-5V,IC=-10mA,f=35MHz 65
MHz
www.cj-elec.com
1
C,Dec,2015
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