 English |
|
|
|
|
|
|
|
| BC368 Datasheet, PDF (1/3 Pages) Motorola, Inc – Amplifier Transistors | |||
| |||
|
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BC368 TRANSISTOR (NPN)
FEATURES
z High Current
z Low Voltage
APPLICATIONS
z General Purpose Switching and Amplification
TO â 92
1.EMITTER
2.COLLECTOR
3.BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
25
20
5
1
0.625
200
150
-55~+150
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE
fT
Test conditions
IC= 0.1mA,IE=0
IC=10mA,IB=0
IE=0.01mA,IC=0
VCB=25V,IE=0
VEB=5V,IC=0
VCE=1V, IC=0.5A
VCE=10V, IC=5mA
VCE=1V, IC=1A
IC=1A,IB=0.1A
IC=1A, VCE=1V
VCE=5V,IC=10mA,f=35MHz
Min Typ Max Unit
25
V
20
V
5
V
10 μA
10 μA
85
375
50
60
0.5
V
1
V
65
MHz
www.cj-elec.com
1
C,Dec,2015
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese