BC350 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (PNP)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BC350 TRANSISTOR (PNP)
FEATURES
TO 92
Power dissipation
P_CM : 0.3 W Tamb=25
Collector current
I_CM: -0.1 A
Collector-base voltage
V_(BR)CBO : -50 V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
1.EMITTER
2. BASE
3. COLLECTOR
123
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter
Symbol Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO Ic= -100 A IE=0
V(BR)CEO IC= -1mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE= -100 A IC=0
Collector cut-off current
Collector cut-off current
ICBO
VCB=-50V, IE=0
ICEO
VCE=-35V, IB=0
Emitter cut-off current
IEBO
VEB= -3V, IC=0
DC current gain
hFE
VCE=-5 V, IC= -2mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCEsat
VBEsat
fT
IC= -10mA, IB= -1mA
IC= -10mA, IB= -1mA
VCE=-5 V,IC=-10mA,
f=30MHz
MIN TYP
-50
-45
-5
40
125
MAX UNIT
V
V
V
-0.1
A
-0.1
A
-0.1
A
450
-0.3
V
-1
V
MHz