BC347 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (NPN)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BC347 TRANSISTOR (NPN)
FEATURES
TO 92
Power dissipation
P_CM : 0.3 W Tamb=25
Collector current
I_CM: 0.1 A
Collector-base voltage
V_(BR)CBO : 50 V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
1.EMITTER
2. BASE
3. COLLECTOR
123
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Symbol
V(BR)CB
O
V(BR)CE
O
Test conditions
Ic= 100 A IE=0
IC= 1mA , IB=0
V(BR)EBO IE= 100 A IC=0
Collector cut-off current
Collector cut-off current
ICBO
VCB=50V, IE=0
ICEO
VCE=35V, IB=0
Emitter cut-off current
DC current gain
IEBO
VEB= 3V, IC=0
hFE
VCE=5 V, IC= 2mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCEsat
VBEsat
IC= 10mA, IB= 1mA
IC= 10mA, IB= 1mA
Transition frequency
fT
VCE=5V,IC=10mA, f=30MHz
MIN TYP
50
45
5
40
125
MAX UNIT
V
V
V
0.1
A
0.1
A
0.1
A
450
0.3
V
1
V
MHz