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| BC327 Datasheet, PDF (1/4 Pages) Motorola, Inc – Amplifier Transistors(PNP) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BC327/BC328
FEATURES
Power dissipation
TRANSISTOR (PNP)
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
BC327
BC328
BC327
BC328
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-50
-30
-45
-25
-5
-800
625
150
-55-150
Unit
V
V
V
mA
mW
â
â
TO-92
1. COLLECTOR
2.BASE
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
IC= -100uA, IE=0
BC327
VCBO
-50
BC328
-30
Collector-emitter breakdown voltage
IC= -10mA , IB=0
BC327
VCEO
-45
BC328
-25
Emitter-base breakdown voltage
VEBO
IE= -10uA, IC=0
-5
Collector cut-off current
BC327
BC328
ICBO
VCB= -45 V , IE=0
VCB= -25V , IE=0
Collector cut-off current
BC327
BC328
ICEO
VCE= -40 V , IB=0
VCE= -20 V , IB=0
Emitter cut-off current
IEBO
VEB= -4 V , IC=0
DC current gain
hFE(1)
VCE=-1 V, IC= -100mA
100
hFE(2)
VCE=-1 V, IC= -300mA
40
Collector-emitter saturation voltage
VCE(sat)
IC=-500mA, IB= -50mA
Base-emitter saturation voltage
VBE(sat)
IC= -500mA, IB=-50mA
Base-emitter voltage
VBE
VCE=-1 V, IC= -300mA
Transition frequency
Collector Output Capacitance
fT
VCE= -5V, IC= -10mA
f = 100MHz
260
Cob
VCB=-10V,IE=0
f=1MHZ
CLASSIFICATION OF hFE
Rank
16
25
Range
100-250
160-400
www.cj-elec.com
1
Typ Max
Unit
V
V
V
-0.1
uA
-0.1
-0.2
uA
-0.2
-0.1
uA
630
-0.7
V
-1.2
V
-1.2
V
MHz
12
pF
40
250-630
','HF,201
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