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| BC308 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TO-92 Plastic-Encapsulate Transistors | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BC307/308/309 TRANSISTOR (PNP)
TO-92
FEATURES
Amplifier dissipation NPN Silicon
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCEO
VEBO
IC
PC
RθJA
RθJC
Tj
Tstg
Parameter
Collector-Emitter Voltage BC307
BC308/309
Emitter-Base Voltage
BC307
BC308/309
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance,
Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Value
-45
-25
-6
-5
-0.1
500
357
125
150
-55-150
Unit
V
V
A
mW
â/W
â/W
â
â
1. COLLECTOR
2. BASE
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
V(BR)CEO
IC=-10μA, IE=0
IC=-2mA, IB=0
BC307
BC308/309
BC307
BC308/309
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)EBO
ICBO
IEBO
IE=-10μA, IC=0
VCB=-45V,IE=0
VCB=-25V,IE=0
VEB=-5V, IC=0
BC307
BC308/309
DC current gain
hFE
VCE=-5V, IC=-2mA
Collector-emitter saturation voltage
VCE(sat)
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5mA
Base-emitter saturation voltage
VBE(sat)
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5mA
Base-emitter voltage
VBE
VCE=-5V, IC=-2mA
Transition frequency
fT
VCE=-5V, IC=-10mA, f=50MHz
Collector output capacitance
Noise figure
CLASSIFICATION OF hFE
Cob
VCB=-10V, IE=0, f=1MHz
VCE=-5V, IC=-0.2mA ,
f=1KHz, RG=2K⦠BC307/BC308
NF
BC309
VCE=-5V, IC=-0.2mA ,
f=30-15KHz, RG=2Kâ¦
BC309
Rank
A
B
Range
120-220
180-460
Min
-50
-30
-45
-25
-5
120
-0.55
Typ Max
-15
-15
800
-0.3
-0.6
-0.75
-1
-0.75
130
6
10
4
4
C
380-800
Unit
V
V
V
nA
nA
V
V
V
V
V
MHz
pF
dB
www.cj-elec.com
1
C,Dec,2015
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