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| BC212 Datasheet, PDF (1/3 Pages) Motorola, Inc – Amlifier Transistors (PNP) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BC212 TRANSISTOR (PNP)
FEATURES
z General Purpose Switching and Amplification.
TO â 92
1.EMITTER
2.BASE
3.COLLECTOR
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-60
-50
-5
-0.1
0.35
357
150
-55~+150
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE
fT
Cob
Test conditions
Min
IC= -0.01mA,IE=0
-60
IC=-2mA,IB=0
-50
IE=-0.01mA,IC=0
-5
VCB=-30V,IE=0
VCE=-30V,IB=0
VEB=-4V,IC=0
BC212 140
VCE=-5V, IC=-2mA BC212B 140
BC212C 350
IC=-100mA,IB=-5mA
IC=-100mA,IB=-5mA
VCE=-5V, IC=-2mA
VCE=-5V,IC=-10mA,f=100MHz
200
VCB=-10V,IC=0, f=1MHz
Typ Max Unit
V
V
V
-15 nA
-0.1 μA
-15 nA
600
400
600
-0.6
V
-1.2
V
-0.72 V
MHz
6
pF
www.cj-elec.com
1
C,Dec,2015
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