BAW56T Datasheet, PDF (1/4 Pages) NXP Semiconductors – High-speed double diode

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Diode
BAW56T/BAV70T/BAV99T SWITCHING DIODE
FEATURES
z Fast Switching Speed
z For General Purpose Switching Applications
z High Conductance
BAW56T
BAV70 T
BAV99T
SOT-523
MARKING:JD
JD
MARKING:JJ
JJ
MARKING:JE
JE
JD
JJ
JE
Solid dot = Green molding compound device,
if none, the normal device
Maximum Ratings @Ta=25℃
Parameter
Reverse Voltage
Forward Current
Non-Repetitive Peak Forward Surge Current @t=8.3ms
Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature range
Symbol
VR
IF
IFSM
PD
RθJA
TJ
TSTG
Limit
85
75
2.0
150
833
150
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Reverse breakdown voltage
V_(BR)
I_R= 1μA
85
Reverse voltage leakage current
I_R1
V_R=75V
I_R2
V_R=25V
Forward voltage
Diode capacitance
Reverse recovery time
I_F=1mA
V_F
I_F=10mA
I_F=50mA
I_F=150mA
C_D
V_R=0 f=1MHz
t _rr
I_F=I_R=10mA
I_rr=0.1×I_R,R_L=100Ω
Max
2
0.03
715
855
1000
1250
1.5
4
Unit
V
mA
A
mW
℃/W
℃
℃
Unit
V
μA
μA
mV
pF
ns
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1
B,Oct,2014