BAW56 Datasheet, PDF (1/4 Pages) NXP Semiconductors – High-speed double diode

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
BAW56/BAV70/BAV99 SWITCHING DIODE
FEATURES
z Fast Switching Speed
z For General Purpose Switching Applications
z High Conductance
BAW56
BAV70
BAV99
SOT-23
MARKING:A1
A1
A1
MARKING:A4
MARKING:A7
A4
A7
A4
A7
Solid dot = Green molding compound device,
if none, the normal device
Maximum Ratings @Ta=25℃
Parameter
Reverse Voltage
Forward Current
Non-Repetitive Peak Forward Surge Current @t=8.3ms
Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature range
Symbol
VR
IF
IFSM
PD
RθJA
TJ
TSTG
Limit
70
200
2.0
225
556
150
-55~+150
Unit
V
mA
A
mW
℃/W
℃
℃
Electrical Characteristics @Ta=25℃
Parameter
Symbol
Reverse breakdown voltage
V_R
V_F1
Forward voltage
V_F2
V_F3
V_F4
Reverse current
I_R
Capacitance between terminals
C_T
Reverse recovery time
t _rr
www.cj-elec.com
Min Typ
70
1
Max Unit
V
0.715
V
0.855 _V
1
V
1.25
V
2.5
μA
1.5
pF
6
ns
Conditions
I_R=100μA
I_F=1mA
I_F=10mA
I_F=50mA
I_F=150mA
V_R=70V
V_R=0,f=1MHz
I_F = I_R = 10mA,
Irr= 0.1 x I_R, R_L = 100Ω
B,Oct,2014