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| BAV99W Datasheet, PDF (1/4 Pages) NXP Semiconductors – High-speed double diode | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diode
BAV99W SWITCHING DIODE
FEATURES
z For high-speed switching applications
z Connected in series
MARKING: KJG
KJG
KJG
Solid dot = Green molding compound device,
if none, the normal device
SOT-323
1
3
2
Maximum Ratings @Ta=25â
Parameter
Reverse Voltage
Forward Current
Non-Repetitive Peak Forward Surge Current @t=8.3ms
Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature range
Symbol
Limit
VR
75
IF
IFSM
2.0
PD
RθJA
625
TJ
150
TSTG
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Reverse breakdown voltage
V(BR)
IR= 1μA
5
Reverse voltage leakage current
IR1
VR=75V
IR2
VR=25V
Forward voltage
Diode capacitance
Reverse recovery time
IF=1mA
VF
IF=10mA
IF=50mA
IF=150mA
CD
VR=0 f=1MHz
t rr
IF=IR=10mA
Irr=0.1ÃIR,RL=100â¦
Max
2.5
25
715
855
1000
1250
4
Unit
V
mA
A
mW
â/W
â
â
Unit
V
μA
nA
mV
pF
ns
www.cj-elec.com
1
B,Oct,2014
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