BAV99S Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – Silicon Switching Diode Array (For high-speed switching applications Connected in series Internal galvanic isolated Diodes in one package)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Diodes
BAV99S
HIGH-SPEED SWITCHING DIODE
FEATURES
 Small Plastic Package
 High Switching Speed
 Low Capacitance
 Two Electrically Isolated Series Configuration Arrays
MARKING: K1
SOT-363
K1
Solid dot = Pin1 indicate.
MAXIMUM RATINGS @( T_a=25℃ unless otherwise noted )
Symbol
Parameter
VRRM
VR
IF
IFRM
Repetitive Peak Reverse Voltage
Reverse Voltage
Forward Current
Repetitive Peak Forward Current
IFSM
Non-Repetitive Peak Forward Surge Current @ t= 8.3ms
PD
RΘJA
Tj
Tstg
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS(T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ
Reverse voltage
V(BR) IR=100μA
75
Reverse current
IR
VR=75V
IF=1mA
Forward voltage
IF=10mA
VF
IF=50mA
IF=150mA
Total capacitance
Reverse recovery time
Ctot
VR=0,f=1MHz
trr
IF= IR=10mA, Irr=0.1×IR, RL=100Ω
Limits
85
75
150
450
2.5
200
625
150
-55~+150
Unit
V
V
mA
A
mW
℃/W
℃
Max
Unit
V
1
μA
0.715
0.855
V
1
1.25
1.5
pF
6
ns
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1
C,Mar,2016