BAV74 Datasheet, PDF (1/4 Pages) NXP Semiconductors – High-speed double diode

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
BAV74 SWITCHING DIODE
FEATURES
z Fast Switching Speed
z Surface Mount Package Ideally Suited for Automatic Insertion
z For General Purpose Switching Applications
z High Conductance
Marking: JA
SOT-23
1
3
2
JA
JA
Solid dot = Green molding compound device,
if none, the normal device
Maximum Ratings @Ta=25℃
Parameter
Symbol
Non-Repetitive Peak Reverse Voltage
V_RM
DC Blocking Voltage
V_R
Average Rectified Output Current
I_O
Non-Repetitive Peak Forward Surge Current @t=8.3ms
I_FSM
Power Dissipation
Thermal Resistance From Junction to Ambient
Junction Temperature
Storage Temperature Range
P_D
R_θJA
T_J
T_STG
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Value
50
200
2.0
225
556
150
-55~+150
Unit
V
mA
A
mW
℃/W
℃
℃
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode Capacitance
Reveres recovery time
Symbol
Test conditions
V_(BR)
I_R= 5µA
I_R
VR=50V
V_F
I_F=100mA
C_D
V_R=0, f=1MHz
I_F=I_R=10mA,R_L=100Ω,
t_rr
I_rr=0.1×I_R
Min Max
Unit
50
V
0.1
µA
1
V
2
pF
4
ns
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1
B,Oct,2014