BAV170 Datasheet, PDF (1/4 Pages) NXP Semiconductors – Low-leakage double diode

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
BAV170
Switching Diode
FEATURES
 Low Leakage Current
 High Switching Speed
APPLICATION
 Low-leakage Current Applications
in Surface Mounted Circuits
MARKING:JX
-
SOT-23
JX
+
+
MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )
Symbol
Parameter
V_RRM
V_R
Repetitive Peak Reverse Voltage
DC Blocking Voltage
Forward Current(single diode )
I_F
Forward Current(double diode )
I_FRM Repetitive Peak Forward Current
I_FSM Non-repetitive Peak Forward Surge Current@ t =8.3ms
P_D Power Dissipation
R_ΘJA Thermal Resistance from Junction to Ambient
T_j
Junction Temperature
T_stg Storage Temperature
Value
85
75
215
125
500
1.0
250
500
150
-55~+150
Unit
V
V
mA
mA
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS(T_a=25℃unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max
Unit
Reverse voltage
Reverse current
V_(BR)
IR
I_R=100μA
VR=75V
75
V
5
nA
IF=1mA
0.9
Forward voltage
IF=10mA
VF
IF=50mA
1
V
1.1
IF=150mA
1.25
Total capacitance
Reverse recovery time
C_tot
VR=0,f=1MHz
t_rr
I_F= I_R=10mA, I_rr=0.1×I_R, R_L=100Ω
2
pF
3
μs
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1
B,Oct,2014