BAS70T Datasheet, PDF (1/4 Pages) Diodes Incorporated – SURFACE MOUNT SCHOTTKY BARRIER DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Diodes
BAS70T/-04T/-05T/06T SCHOTTKY BARRIER DIODE
FEATURES
z Low Turn-on Voltage
z Fast Switching
SOT-523
BAS70T Marking: 7C
BAS70-04T Marking: 7D
BAS70-05T Marking: 7E
MARKING:
BAS707BAS70-047BAS70-057
BAS70-06T Marking: 7F
BAS70-067
Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings @Ta=25℃
Parameter
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Symbol
V_RRM
V_RWM
V_R
I_FM
Non-Repetitive Peak Forward Surge Current @ t = 8.3ms
I_FSM
Power Dissipation
P_D
Thermal Resistance Junction to Ambient
R_θJA
Junction temperature
Storage Temperature
T_J
T_STG
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Limit
70
70
100
150
667
125
-55~+150
Unit
V
mA
mA
mW
℃/W
℃
℃
Parameter
Reverse breakdown voltage
Reverse voltage leakag e current
Forward voltage
Diode capacitance
Reveres recovery time
Symbol
Test conditions
V_(BR)
I_R=10µA
I_R
V_R=50V
V_F
I_F=1mA
I_F=15mA
C_D
V_R=0, f=1MHz
I_F=I_R=10mA,Irr=0.1xI_R,
t_rr
R_L=100Ω
Min
Max
Unit
70
V
100
nA
410
mV
1000
2
pF
5
ns
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1
E,Oct,2015