BAS40W Datasheet, PDF (1/4 Pages) NXP Semiconductors – Schottky barrier double diodes

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diodes
SOT-323
BAS40W/-04/-05/-06 SCHOTTKY BARRIER DIODE
FEATURES
z Low Forward Voltage
z Fast Switching
BAS40W MARKING: 43•
MARKING:
BAS40W
BAS40W-06 MARKING: 46 BAS40W-05 MARKING：45 BAS40W-04 MARKING：44
BAS40W-06
BAS40W-05
BAS40W-04
Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings @Ta=25℃
Parameter
Symbol
Limit
Peak repetitive peak reverse voltage
V_RRM
Working peak reverse voltage
V_RWM
40
DC blocking voltage
V_R
Forward continuous current
I_FM
200
Power dissipation
P_D
150
Thermal resistance junction to ambient
R_θJA
667
Junction temperature
T_J
125
Storage temperature range
T_STG
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse recovery time
Symbol
Test conditions
Min
V_(BR)
I_R= 10μA
40
I_R
V_R=30V
V_F
I_F=1mA
I_F=40mA
C_D
V_R=0,f=1MHz
t _rr
I_rr=1mA, I_R=I_F=10mA
R_L=100Ω
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1
Unit
V
mA
mW
℃/W
℃
℃
Max
Unit
V
200
nA
380
mV
1000
5
pF
5
ns
D,Oct,2015